- Ion species: B +, BF2 +, P +, As +, In +, etc.
- Dose: 1011 ~ 1015 ions / cm2
- Acceleration energy: 5Kev ~ 4.6Mev
- RTA processing
Blanket Film Wafers (film-coated wafer)
Various kinds of flim services are available by Advantec.
Category | Film Type | Process | Category | Film Type | Process |
Oxide | Th-SiO2 | Thermal | Low-K | BD | CVD |
Low-Particle Th-SiO2 * | Thermal | BDⅡX | CVD | ||
PE-SiO2 | PE-CVD | AURORA | CVD | ||
PE-TEOS | PE-CVD | CORAL | CVD | ||
LP-CVD TEOS | PE-CVD | Metal | Ta, TaN | Spatter | |
HDP | PE-CVD | Ti, TiN | Spatter | ||
USG | PE-CVD | W | SpUtter, CVD | ||
PSG | CVD | Cr | Spatter | ||
BPSG | CVD | Cu | Spatter, EP | ||
RTO | Anneal | Al, Al - Cu, Al - Si | Spatter | ||
Poly Silicon | Doped / non Doped Poly | LP-CVD | Pt | Spatter | |
Amorphous | PE-CVD | Ni | Spatter | ||
Nitride | LP-CVD SIN | LP-CVD | Ru | Spatter | |
PE-CVD SIN | PE-CVD | Pd | Spatter | ||
Photo Resists | I-Line | Coating | Au | Spatter | |
KrF | Coating | Co | Spatter | ||
ArF | Coating | etc. |
Spatter |
Low Particle Thermal Oxide Wafer (low-defect thermal oxide film wafer)
Low Particle Thermal Oxide Wafer formed in a state-of-the-art oxidizing furnace that controls particles and metal contamination is proposed.
Atomic Layer Deposition (ALD film)
Next Generation Gate Material
Ion Implantation Wafer (ion implantation wafer)